The SiGe growth rate increases strongly with an increasing GeH4 flow. This is attributed to an increased hydrogen desorption caused by the presence of Ge atoms on the growing surface that frees nucleation sites for the incoming Ge and Si atoms

The Ge concentration decreases significantly as the growth temperature increases from lower Temp to Nominal Temp. The associated n parameter depends exponentially on the reverse absolute temperature, with an “activation energy” of the order of -15?kcal?mol-1. At the same time, the SiGe growth rate increases strongly as the growth temperature increases, with an activation energy droppin- - g from 47 down to 12?kcal?mol-1 as the Ge content in the film goes up

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