Adding HCI leads at 700oC to a significant increase in the Ge content x of Sige layers.

The SiGe growth rate increases strongly with an increasing GeH4 flow. This is attributed to an increased hydrogen desorption caused by the presence Of Ge on the growing surface that frees nucleation sites for the incoming Ge and Si atoms.

Meanwhile, adding HCI leads to a strong, linear reduction of the SiGe growth rate with the HCI mass flow.

As expected, the Ge concentration decreases significantly as the growth temperature increases from 650 to 750 oC. The associated n parameter depends, exponentially on the reverse absolute temperature, with an "activation energy" of the order of —15 kcal mol-I.

At the same time, the SiGe growth rate increases strongly as the growth temperature increases, with a activation energy dropping from 47 down to 12 kcal mol-I as the Ge conte the film goes up (from 0% up to 27% at 700 QC).

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