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RPCVD SiGe information
Adding HCl leads at
Nominal Temp to a significant increase in the Gex of SiGe layers
The SiGe growth rate increases strongly with an
increasing GeH4 flow. This is attributed to an increased hydrogen
desorption caused by the presence of Ge atoms on the growing surface
that frees nucleation sites for the incoming Ge and Si atoms
The Ge concentration decreases significantly as the
growth temperature increases from lower Temp to Nominal Temp. The
associated n parameter depends exponentially on the reverse absolute
temperature, with an “activation energy”
the
order of -15kcal/mol-1. At the same time, the SiGe growth rate
increases strongly as the growth temperature increases, with an
activation energy dropping from 47 down to 12kcal/mol-1 as the Ge
content in the film goes up
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